Antimony Doped P-type Zinc Oxide for Piezotronics and Optoelectronics

نویسندگان

  • Ken C. Pradel
  • Benjamin Klein
  • Meilin Liu
چکیده

iii ACKNOWLEDGEMENTS I would like to start by thanking my advisor, Dr. Zhong Lin Wang, for his support and guidance during my time here at Georgia Tech. I will never forget the trust and academic freedom he gave me to pursue a research topic that would not only be challenging, but may have proven fruitless, as it has for so many other researchers in the past. It is thanks to him that I was able to carve out my own niche, and pursue a project I could truly be passionate about. I would also like to thank my committee members for their assistance over the years. I would like to thank Dr. Elsa Reichmanis for leading the IGERT program, which showed me the bigger picture my work could have through its integration of scientific and public policy courses. I would like to thank Dr. Preet Singh for the numerous conversations about research and life on the walks to and from IPST. Next, I would like to thank Dr. Meilin Liu for teaching many of the fundamental concepts that form the foundation of my knowledge of materials science through the courses I took with him. I would like to thank Dr. Benjamin Klein for giving me the opportunity to investigate more exotic applications of my material in radiation detection through our collaborative effort with Dr. Nolan Hertel. Finally, I would like to thank Dr. Christopher Summers, who could not be present at my thesis defense, but was a key member of my proposal committee, and always a great source of advice. I would like to thank all the members of Dr. Wang's group, for their help and support. First and foremost, I would like to thank Dr. Wenzhuo Wu, who helped guide my work during my career here, and helping me find greater context and application for my iv research. I would have been completely lost in my research had you not reached out and taken interest in my work. I would also like to thank Dr. Yong Ding for his technical assistance and constant moral support. Your great interest in my research was always a major motivator to develop new novel structures for us to probe together. I would also like to give special thanks to Drs. for their advice and friendship. To all the other members of the group, both past and present, and too numerous to list, I …

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Piezotronic effect in solution-grown p-type ZnO nanowires and films.

Investigating the piezotronic effect in p-type piezoelectric semiconductor is critical for developing a complete piezotronic theory and designing/fabricating novel piezotronic applications with more complex functionality. Using a low temperature solution method, we were able to produce ultralong (up to 60 μm in length) Sb doped p-type ZnO nanowires on both rigid and flexible substrates. For the...

متن کامل

Structural and Electrical Characterization of Zinc Oxide Doped with Antimony

This work report on the structural and electrical characteristics of zinc oxide single crystal samples doped with antimony. Doping was carried out by antimony thermal diffusion at 1000 °C for periods of one and two hours under nitrogen environment from a solid source formed by antimony oxide. X-ray diffraction was used to determine the crystalline phases in samples and the structural change owi...

متن کامل

An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires.

An aqueous solution-based doping strategy was developed for controlled doping impurity atoms into a ZnO nanowire (NW) lattice. Through this approach, antimony-doped ZnO NWs were successfully synthesized in an aqueous solution containing zinc nitrate and hexamethylenetetramine with antimony acetate as the dopant source. By introducing glycolate ions into the solution, a soluble antimony precurso...

متن کامل

Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition.

We report, for the first time, the synthesis of the high-quality p-type ZnO NWs using a simple chemical vapor deposition method, where phosphorus pentoxide has been used as the dopant source. Single-crystal phosphorus doped ZnO NWs have their growth axis along the 001 direction and form perfect vertical arrays on a-sapphire. P-type doping was confirmed by photoluminescence measurements at vario...

متن کامل

Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi₂Se₃ topological insulator nanoribbons.

A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here w...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2015